MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB014N06NATMA1


Transistor: N-MOSFET; unipolar; 60V; 180A; 214W; PG-TO263-7
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Infineon 679
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AUD 2.9785
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            Optimos      
STP315N10F7


STMicroelectronics MOSFET
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STMicroelectronics 679
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AUD 5.541
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180 A100 V2.3 mOhmsn - channel20 V3.5 V- 55 C+ 175 C315 Wthrough holeTO - 220 - 3Tubesi1 channel20 V180 nC aec - q101stripfet
R6077VNZC17


MOSFETs 600V 29A TO-3PF, PrestoMOS with integrated high-speed diode
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ROHM 679
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AUD 12.8881
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29 A600 V51 OhmsN - Channel 6.5 V- 55 C+ 150 C113 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 30 V , 30 V108 nCEnhancement  
BSZ900N15NS3 G


Infineon Technologies MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
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Infineon 678
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AUD 0.7634
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13 A150 V90 mOhmsN - Channel 2 V- 55 C+ 150 C38 WSmd/SmtTDSON - 8ReelSi1 Channel20 V7 nCEnhancement Optimos
IPP024N08NF2SAKMA1


MOSFET TRENCH 40<-<100V
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Infineon 678
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AUD 1.8716
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182 A80 V2.4 mOhmsN - Channel 3.8 V- 55 C+ 175 C214 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V89 nCEnhancement  
NCEP85T25D


MOSFET N Trench 85V 250A (Tc) 4.5V @ 250uA 2.6 mΩ @ 100A,10V TO-263-2 RoHS
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NCE Power 678
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AUD 2.4808
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STL260N4LF7


MOSFETs N-channel 40 V, 0.00085 Ohm typ 120 A STripFET F7 Power MOSFET
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STMicroelectronics 678
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AUD 7.239
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IPQC60R017S7XTMA1


MOSFETs Y
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Infineon 678
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AUD 14.1358
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30 A600 V17 mOhmsN - Channel 4.5 V- 40 C+ 150 C500 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V196 nCEnhancement CoolMOS
NCE8290AC


82V 90A 9mO@10V,20A 130W N Channel TO-220 MOSFETs ROHS
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NCE Power 668
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AUD 0.4479
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IRFSL7440PBF


International Rectifier MOSFET 40V, 120A, 2.5 mOhm 90 nC Qg, TO-262
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AUD 1.1068
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208 A40 V2.5 mOhmsN - Channel 3.9 V- 55 C+ 175 C208 WThrough HoleI2PAK - 3TubeSi1 Channel 135 nCEnhancement Strongirfet
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