MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STB22NM60N


N-Channel 600 V 16A (Tc) 125W (Tc) Surface Mount D²PAK (TO-263)
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STMicroelectronics 988
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AUD 4.6299
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10 A600 V220 mOhmsN - Channel    125 WSmd/SmtD2PAK - 3ReelSi1 Channel    Mdmesh
UT6KE5TCR


MOSFETs UT6KE5 is a low on-resistance MOSFET ideal for switching applications and DC-DC Converter. This product includes two 100V MOSFETs in a small surface mount package (DFN2020-8D).
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ROHM 986
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AUD 0.3218
Multiples of: 1

2 A100 V207 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTDFN2020 - 8DReel , Cut TapeSi2 Channel- 20 V , + 20 V2.8 nCEnhancement  
SQJA86EP-T1_BE3


MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay 985
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AUD 0.614
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           Reel , Cut TapeSi      
FDS6892A


20V 7.5A 18mO@4.5V,7.5A 900mW 2 N-Channel SOIC-8 MOSFETs ROHS
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ON Semiconductor 985
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AUD 0.9021
Multiples of: 1

7.5 A20 V18 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReelsi2 channel12 V enhancement powertrench
SQJ461EP-T1_GE3


P-Channel 60 V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 985
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AUD 2.3153
Multiples of: 1

- 30 A- 60 V16 mOhmsP - Channel   + 175 C83 WSmd/SmtSO - 8ReelSi 20 V   Trenchfet
SQJ461EP-T1-GE3


MOSFET 60V 30A 83W P-Ch Automotive
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Vishay 985
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AUD 2.3153
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   P - Channel   + 175 C Smd/SmtPOWERPAK SO - 8LReel       
PMV50XPR


SOT-23 MOSFETs ROHS
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TECH PUBLIC 984
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AUD 0.0701
Multiples of: 5

                   
CJU15SN10


TO-252-2L MOSFETs ROHS
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Changjing Electronics Technology 984
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AUD 0.1497
Multiples of: 5

                   
SPP20N60C3


MOSFET N Trench 650V 20.7A 3.9V @ 1mA 190 mΩ @ 13.1A,10V TO-220 (TO-220-3) RoHS
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Infineon 888
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AUD 2.2069
Multiples of: 1

20.7 A600 V190 mOhmsN - Channel  - 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Coolmos
RSJ301N10FRATL


MOSFET Nch 100V Vds 30A 0.036Rds(on) 60Qg
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ROHM 860
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AUD 1.7403
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15 A100 V33 mOhmsN - Channel 1 V + 150 C50 WSmd/SmtD2PAK - 3Cut TapeSi1 Channel10 V50 nCEnhancementAec - Q101 
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