MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AON6380


Transistor: N-MOSFET; unipolar; 30V; 24A; 10.5W; DFN5x6
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Alpha & Omega 1037
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AUD 0.1771
Multiples of: 5

                   
NVMFS5C442NLAFT1G-YE


MOSFETs T6 40V S08FL
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ON Semiconductor 1036
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AUD 0.704
Multiples of: 1

130 A40 V2.5 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel20 V50 nCEnhancement  
IPLU250N04S41R7XTMA1


MOSFET MOSFET_20V 40V
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Infineon 1036
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AUD 2.1179
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   N - Channel     Smd/SmtHSOF - 8Cut TapeSi1 Channel   Aec - Q101 
FDMS8026S


Fairchild Semiconductor MOSFET 30V N-Channel PowerTrench SyncFET
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ON Semiconductor 1034
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AUD 1.5597
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22 A30 V4.3 mOhmsN - Channel20 V1.5 V- 55 C+ 150 C41 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V13 nC  Powertrench Syncfet
IPT012N06NATMA1


MOSFETs IFX FET 60V
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Infineon 1034
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AUD 3.3328
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313 A60 V1.2 mOhmsN - Channel 2.1 V- 55 C+ 175 C214 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , 20 V106 nCEnhancement  
WMO12N80M3


Transistor: N-MOSFET; SJ-MOSFET M3; unipolar; 800V; 12A; 86W; TO252
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Wayon 1034
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AUD 1.7343
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            Sj - Mosfet M3      
BUK9K45-100E,115


MOSFET Dual N-channel 100 V 45 mo FET
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Nexperia 1034
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AUD 1.797
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21 A100 V38.3 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C53 WSmd/SmtSOT - 1205 - 8ReelSi2 Channel15 V33.5 nCEnhancement  
QS5K2TR


MOSFET N-CHAN MOSF 30V 2A TSMT5
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ROHM 1033
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AUD 0.2565
Multiples of: 5

2 A30 V100 mOhmsN - Channel 500 mV- 55 C+ 150 C1.25 WSmd/SmtT SMT - 5ReelSi2 Channel4.5 V2.8 nCEnhancement  
NTMFS4C03NT1G


ON Semiconductor MOSFET NFET SO8FL 30V 138A 2.1MO
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ON Semiconductor 64
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AUD 0.4876
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136 A30 V1.5 mOhmsN - Channel 1.3 V- 55 C+ 150 C64 WSmd/SmtSO - FL - 8ReelSi1 Channel20 V45.2 nCEnhancement  
NVT100N10C


TO-220C MOSFETs ROHS
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NH 64
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AUD 0.2249
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