MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
15N10


TO-252 MOSFETs ROHS
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TECH PUBLIC 1081
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AUD 0.1797
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TM50N06D


60V 50A 14m TO-252-3L MOSFETs ROHS
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Tritech-MOS 1081
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AUD 0.2287
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CSD87384M


Texas Instruments MOSFET Sync Buck Power Block II
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Texas Instruments 1079
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AUD 1.8881
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30 A30 V6.4 mOhms , 1.95 mOhmsN - Channel 1.1 V- 55 C+ 150 C8 WSmd/SmtPTAB - 5ReelSi2 Channel10 V7.1 nC , 31 nCEnhancement Nexfet
R6055VNZ4C13


MOSFET Nch 600V 59mohm(typ.) Power MOSFET
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ROHM 1079
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AUD 10.2448
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55 A600 V71 mOhmsN - Channel 6.5 V- 55 C+ 150 C543 WThrough HoleTO - 247 - 3TubeSi1 Channel- 30 V , 30 V80 nCEnhancement  
R6020FNX


ROHM Semiconductor MOSFET Trans MOSFET N-CH 600V 20A
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ROHM 1078
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AUD 6.0571
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20 A600 V250 mOhmsN - Channel     Through HoleTO - 220 - 3BulkSi1 Channel     
BML6402


MOSFET P Trench 20V 3.7A 1.2V @ 250uA 65 mΩ @ 3.7A,4.5V SOT-23 (SOT-23-3) RoHS
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Bourne 1076
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AUD 0.0353
Multiples of: 10

                   
IPP019N08NF2SAKMA1


MOSFET TRENCH 40<-<100V
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Infineon 1067
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AUD 2.2985
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191 A80 V1.9 mOhmsN - Channel 3.8 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V124 nCEnhancement  
HSS2P20


200V 2A 0.85W 2400m@10V,1A 4V@250uA 1PCSPChannel SOT-23L MOSFETs ROHS
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HUASHUO 1028
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AUD 0.266
Multiples of: 5

                   
UMW10N65F


TO-220F-3 MOSFETs ROHS
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Youtai 100
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AUD 0.4006
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IQDH29NE2LM5CGATMA1


MOSFETs N
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Infineon 0
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AUD 2.6433
Multiples of: 1

789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement OptiMOS
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