MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMT10H025LK3-13


MOSFET MOSFET BVDSS: 61V-100V
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Diodes Incorporated 1161
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AUD 0.5668
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         Smd/SmtTO - 252 - 3Cut TapeSi      
STP80N6F6


MOSFET N-CH 60V 110A STripFET VI DeepGATE
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STMicroelectronics 1161
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AUD 1.0641
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110 A60 V5.8 mOhmsN - Channel20 V4.5 V- 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V122 nC Aec - Q101Stripfet
IRLL110TR(UMW)


SOT-223 MOSFETs ROHS
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Youtai 1159
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AUD 0.1604
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SWD065R68E7T


80V 95A 7.6mΩ TO-252 MOSFETs ROHS
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Sam&wing 1159
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AUD 0.2833
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FDP16AN08A0


MOSFET 75V 58a 0.016 Ohms/VGS=10V
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ON Semiconductor 1159
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AUD 0.481
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58 A75 V13 mOhmsN - Channel  - 55 C+ 175 C135 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Powertrench
IPU95R2K0P7AKMA1


Transistor: N-MOSFET; unipolar; 950V; 2.4A; 37W; IPAK
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Infineon 1159
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AUD 0.7272
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            Coolmos P7      
BSC025N03MS G


Infineon Technologies MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M
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Infineon 1159
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AUD 0.7388
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40 A30 V6.7 mOhmsN - Channel 1 V- 55 C+ 150 C35 WSmd/SmtTDSON - 8ReelSi1 Channel20 V27 nCEnhancement Optimos
HSU6048


60V 90A 60W 3.6m@10V,20A 2.3V@250uA 1PCSNChannel TO-252 MOSFETs ROHS
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HUASHUO 1159
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AUD 0.8604
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IPW60R099P6XKSA1


Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
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Infineon 1159
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AUD 3.7761
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37.9 A600 V89 mOhmsN - Channel 3.5 V- 55 C+ 150 C278 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , 20 V70 nCEnhancement CoolMOS
BSC040N08NS5


Infineon TRENCH 40<-<100V
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Infineon 161
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AUD 1.6478
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