MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPTC026N12NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 1212
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AUD 4.9746
Multiples of: 1

222 A120 V2.6 mOhmsN - Channel 3.1 V- 55 C+ 175 C278 WSMD/SMTHDSOP - 16Reel , Cut TapeSi1 Channel- 20 V , + 20 V70 nCEnhancement  
KNE4603A2


30V 7A 20mO@10V,7A 1.5W 2 N-Channel SOP-8 MOSFETs ROHS
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KIA 1212
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AUD 0.1314
Multiples of: 5

                   
WSF28N06


MOSFET N Trench 60V 28A (Tc) 3V @ 250uA 40 mΩ @ 12A,10V TO-252-2 (DPAK) RoHS
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Winsok 1211
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AUD 0.2555
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SPD50P03L G


MOSFET P-Ch -30V 50A DPAK-4 OptiMOS P
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Infineon 1211
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AUD 1.5269
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50 A30 V5.7 mOhmsP - Channel 2 V- 55 C+ 175 C150 WSmd/SmtTO - 252ReelSi1 Channel20 V- 126 nCEnhancementAec - Q101Optimos
IPD088N06N3G(UMW)


TO-252 MOSFETs ROHS
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Youtai 1207
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AUD 0.2525
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BUK9Y1R3-40HX


BUK9Y1R3-40H/SOT669/LFPAK
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Nexperia 1207
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AUD 1.2281
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          LFPAK56 - 5 Si      
STF16N65M5


Transistor: N-MOSFET; unipolar; 650V; 7.3A; 90W; TO220FP
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STMicroelectronics 1207
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AUD 2.0486
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   N Channel               
IXFK170N10P


MOSFET PolarHT HiperFET 100v, 170A
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IXYS 1207
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AUD 15.5806
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170 A100 V9 mOhmsN - Channel 5 V- 55 C+ 175 C714 WThrough HoleTO - 264 - 3TubeSi1 Channel20 V198 nCEnhancement Polarht, Hiperfet
IRF840ASTRRPBF


Vishay Semiconductors MOSFET N-Chan 500V 8.0 Amp
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Vishay 1206
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AUD 1.9701
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8 A500 V850 mOhmsN - Channel30 V - 55 C+ 150 C3.1 WSmd/SmtD2PAK - 3ReelSi   Enhancement  
HUF75542P3


MOSFET 75a 80V N-Ch UltraFET 0.014 Ohm
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ON Semiconductor 1206
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AUD 2.0916
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75 A80 V14 mOhmsN - Channel  - 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement Ultrafet
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