MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSF30100D


30V 100A 3.6mΩ@10V,30A 68W 1.6V@250uA N Channel TO-252 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Winsok 1366
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AUD 0.2394
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DMP3007SPS-13


MOSFET P Trench 30V 90A (Tc) 3V @ 250uA 7 mΩ @ 15A,10V PowerDI5060-8 RoHS
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Diodes Incorporated 1365
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AUD 0.7062
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IPB025N10N3 G


MOSFET OptiMOS3 PWRTrnsistr N-CH
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Infineon 1365
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AUD 5.6222
Multiples of: 1

180 A100 V2 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel20 V206 nCEnhancement Optimos
IPF067N20NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 1365
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AUD 6.5179
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138 A200 V6.2 mOhmsN - Channel 3.7 V- 55 C+ 175 C300 WSMD/SMTD2PAK - 7Reel , Cut TapeSi1 Channel- 20 V , + 20 V72 nCEnhancement  
DMN10H170SFG-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 100Vdss 20Vgss
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Diodes Incorporated 1364
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AUD 0.3087
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2.9 A100 V122 mOhmsN - Channel 3 V- 55 C+ 150 C2 WSmd/SmtPowerdi3333Reel-1 Channel+/- 20 V14.9 nCEnhancement  
IRF530NSTRLPBF


MOSFET N Trench 100V 17A (Tc) 4V @ 250uA 90 mΩ @ 9A,10 TO-263-2 RoHS
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Infineon 1363
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AUD 0.7602
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17 A100 V90 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V37 nC   
DMP2012SN-7


Diodes Incorporated MOSFET 20V 700mA
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Diodes Incorporated 1362
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AUD 0.1576
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- 700 mA- 20 V300 mOhmsP - Channel12 V - 65 C+ 150 C500 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel12 V Enhancement  
RQ5E025SPTL


MOSFET PCH -30V -2.5A SMALL SIGNAL
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ROHM 1358
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AUD 0.2972
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2.5 A30 V98 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtSOT - 346T - 3Cut TapeSi1 Channel20 V5.4 nCEnhancement  
TN2124K1-G


Transistor: N-MOSFET; unipolar; 240V; 0.14A; 360mW; SOT23-3
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Microchip 1125
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AUD 0.9343
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134 mA240 V15 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel4.5 V Enhancement  
FCU900N60Z


Fairchild Semiconductor MOSFET Low Power Two-Input Logic Gate TinyLogic
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ON Semiconductor 10
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AUD 0.8485
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4.5 A675 V900 mOhmsN - Channel20 V3.5 V- 55 C+ 150 C52 WSmd/SmtIPAK - 3TubeSi1 Channel20 V13 nC  Superfet Ii
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