MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFH4234TRPBF


International Rectifier MOSFET 25V Single N-Ch HEXFET PWR 50A
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Infineon 1440
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AUD 0.491
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22 A25 V5.6 mOhmsN - Channel20 V1.6 V- 55 C+ 150 C3.5 WSmd/SmtPQFN - 8ReelSi1 Channel20 V17 nC  Fastirfet
IRFL4105TRPBF


Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
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Infineon 1440
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AUD 0.6666
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3.7 A55 V45 mOhmsN - Channel    2.1 WSmd/SmtSOT - 223ReelSi1 Channel20 V23 nC   
NVTFS020N06CTAG


MOSFET Power MOSFET Single N-Channel u8FL 60 V 20.3 mO 27 A Active OPN
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ON Semiconductor 1440
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AUD 0.811
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           Cut Tape       
KCD3008A


85V 100A 4.5mΩ@10V,50A 85W N Channel TO-252-2 MOSFETs ROHS
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KIA 1440
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AUD 0.8166
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NVMFS5C604NLWFAFT1G


MOSFET T6 60V HEFET
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ON Semiconductor 1440
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AUD 4.6082
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287 A60 V930 uOhmsN - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V120 nCEnhancementAec - Q101 
SIA400EDJ-T1-GE3


Vishay Semiconductors MOSFET 30V 12A 19.2W 19mOhms 4.5V
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Vishay 1439
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AUD 0.2879
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12 A30 V19 mOhmsN - Channel  - 55 C+ 150 C19.2 WSmd/SmtPOWERPAK - SC - 70 - 6ReelSi 12 V   Trenchfet, Powerpak
IRF620PBF


MOSFET N Trench 200V 5.2A 4V @ 250uA 800 mΩ @ 3.1A,10V TO-220 (TO-220-3) RoHS
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Vishay 1439
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AUD 0.681
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5.2 A200 V800 mOhmsN - Channel 2 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel10 V14 nCEnhancement  
DMTH6010LK3Q-13


MOSFET 60V 175c N-Ch FET 8mOhm 10Vgs 70A
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Diodes Incorporated 1439
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AUD 0.9293
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70 A60 V12 mOhmsN - Channel 1 V- 55 C+ 175 C60 WSmd/SmtTO - 252 - 3ReelSi1 Channel+/- 20 V41.3 nCEnhancementAec - Q101 
BUK7K17-60EX


NXP Semiconductors MOSFET
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Nexperia 1439
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AUD 1.0768
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30 A60 V12 mOhmsN - Channel  - 55 C+ 175 C53 WSmd/SmtLFPAK33 - 4ReelSi2 Channel10 V23.6 nCEnhancement  
IPD12CN10NGATMA1


Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
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Infineon 1439
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AUD 1.9851
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