MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI4401BDY


SOP-8 MOSFETs ROHS
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TECH PUBLIC 1474
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.4552

Multiples of: 5

                   
ISZ113N10NM5LF2ATMA1


MOSFETs N
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Infineon 1474
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 1.5466

Multiples of: 1

63 A100 V11.3 mOhmsN - Channel 3.9 V- 55 C+ 175 C100 WSMD/SMTTSDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V23 nCEnhancement OptiMOS
IRFR214TRPBF


Vishay Semiconductors MOSFET N-Chan 250V 2.2 Amp
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Vishay 1472
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 0.7076

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2.2 A250 V2 OhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi   Enhancement  
IRFI644GPBF


N-Channel 250 V 7.9A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 1472
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 1.476

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           TubeSi      
FDBL9403_F085


MOSFET TO-leadless, PT8, 40V
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ON Semiconductor 1472
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between Thu. 30 Jul to Mon. 03 Aug
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AUD 3.3821

Multiples of: 1

240 A40 V0.9 mOhmsn - channel20 V3.3 V- 55 C+ 175 C357 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V144 nCenhancement powertrench
SP20N03TH


TO-252-2L MOSFETs ROHS
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Siliup 1469
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.0804

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FDS6612A(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1469
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.0947

Multiples of: 5

                   
CSD25501F3


MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Texas Instruments 1469
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.105

Multiples of: 5

3.6 A20 V260 mOhmsP - Channel 1.05 V- 55 C+ 150 C500 mWSmd/SmtPICOSTAR - 3Cut TapeSi1 Channel- 20 V1.02 nCEnhancement  
KND3404C


40V 80A 6.5mO@10V,15A 52.1W N Channel TO-252 MOSFETs ROHS
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KIA 1469
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.1993

Multiples of: 5

                   
WSD30L120DN56


MOSFET P Trench 30V 120A (Tc) 2.5V @ 250uA 3.6 mΩ @ 30A,10V DFN 5x6-8 RoHS
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Winsok 1459
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between Fri. 07 Aug to Wed. 12 Aug
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AUD 0.8723

Multiples of: 1

                   
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