MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BXP4N65U


Transistor: N-MOSFET
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Bridgelux 1518
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AUD 0.2737
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NVD4806NT4G-VF01


MOSFET NFET DPAK 30V 76A 6MOHM
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ON Semiconductor 1518
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AUD 0.6558
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76 A30 V6 mOhmsN - Channel 1.5 V- 55 C+ 175 C68 WSmd/SmtDPAK - 3Cut TapeSi1 Channel20 V37 nCEnhancementAec - Q101 
IRF6712STRPBF


N-Channel 25 V 17A (Ta), 68A (Tc) 2.2W (Ta), 36W (Tc) Surface Mount DIRECTFET™ SQ
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Infineon 1518
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AUD 1.2267
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17 A25 V6.7 mOhmsN - Channel20 V1.9 V- 40 C+ 150 C2.2 WSmd/SmtDirectfetReelSi1 Channel20 V12 nC  Directfet
SP40P65T1


40V 3A 2W 85m@4.5V,2A 1V@250uA SOT-23-3L MOSFETs ROHS
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Siliup 1513
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AUD 0.0286
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SI2302CDS-T1-GE3-MS


20V 3A 40mΩ@4.5V,3A 1.56W 1V@250uA N Channel SOT-23 MOSFETs ROHS
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MSKSEMI 1513
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AUD 0.0254
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JSM3401


SOT-23 MOSFETs ROHS
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JSMSEMI 1513
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AUD 0.0324
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HD3400


MOSFET N Channel 30V 5.8A 1.4V @ 250uA 35mO @ 5.8A,10V SOT-23 RoHS
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High Diode 1513
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AUD 0.0326
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IXTA52P10P


MOSFET -52.0 Amps -100V 0.050 Rds
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IXYS 1479
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AUD 7.0269
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52 A100 V50 mOhmsP - Channel  - 55 C+ 150 C300 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V Enhancement  
SE2301


MOSFET P Trench 20V 2.8A 450mV @ 250uA（Min） 100 mΩ @ 2.8A,4.5V SOT-23 (SOT-23-3) RoHS
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SINO-IC 1416
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AUD 0.0159
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PT2302A


SOT-23 MOSFETs ROHS
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PUOLOP 931
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AUD 0.0254
Multiples of: 20

                   
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