MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQD2N60CTM


Transistor: N-MOSFET; unipolar; 600V; 1.14A; 44W; DPAK
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ON Semiconductor 1686
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AUD 0.9547
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            Qfet®      
ZXMS6005DN8-13


MOSFETs Low Side IntelliFET
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Diodes Incorporated 1679
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AUD 1.0933
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BSC010NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 1673
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AUD 1.1876
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100 A25 V1 mOhmsN - Channel 1.2 V- 55 C+ 150 C96 WSmd/SmtTDSON - 8ReelSi1 Channel10 V64 nCEnhancement Optimos
IRF740LCPBF-BE3


N-Channel 400V 10A (Tc) 125W (Tc) Through Hole TO-220AB
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Vishay 1672
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AUD 2.6215
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10 A400 V550 mOhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V39 nCEnhancement  
SSR1N60BTM_WS


Fairchild Semiconductor MOSFET 600V 0.9A 12Ohm N-Channel
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ON Semiconductor 1671
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AUD 0.3513
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900 mA600 V11.5 OhmsN - Channel30 V2 v to 4 V- 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel30 V4.8 nCEnhancement  
IRF840HPBF


MOSFETs Power MOSFET, 850mO 10V
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Vishay 1671
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AUD 1.2752
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7.3 A500 V850 mOhmsN - Channel 4 V- 55 C+ 150 C125 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , + 30 V39 nCEnhancement  
TK60S06K3L(T6L1,NQ


Toshiba MOSFET N-Ch MOS 60A 60V 88W 2900pF 0.008
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Toshiba 1670
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AUD 1.5216
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60 A60 V8 mOhmsN - Channel    88 WSmd/SmtTO - 252 - 3ReelSi1 Channel     
SQD40031EL_GE3-VB


TO-252 MOSFETs ROHS
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VBsemi Elec 1653
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AUD 1.0425
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TN2404K-T1-GE3


MOSFET 240V 0.2A 0.36W 4.0ohms @ 10V
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Vishay 1184
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AUD 0.6446
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200 mA257 V2.2 OhmsN - Channel 1.65 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V4.87 nCEnhancement Trenchfet
NVMFS5C638NLWFT1G


MOSFET 60V 3.0 MOHM T6 SO-8FL DUAL DFN-8
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ON Semiconductor 212
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AUD 2.2821
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133 A60 V3 mOhmsN - Channel 1.2 V- 55 C+ 175 C100 WSmd/SmtSO - 8FLCut TapeSi1 Channel20 V40.7 nCEnhancementAec - Q101 
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