MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SL403


30V 70A 90W P Channel TO-252 MOSFETs ROHS
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SLKORMICRO 1687
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AUD 0.2646
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IPP038N15NM6AKSA1


MOSFETs OptiMOS 6 power MOSFET 150 V normal level in TO-220 package
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Infineon 1687
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AUD 3.7269
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178 A150 V3.6 mOhmsN - Channel 4 V- 55 C+ 175 C294 WThrough HolePG - TO220 - 3TubeSi1 Channel+ 20 V69 nCEnhancement OptiMOS
STW57N65M5


MOSFET N-Ch 650V 0.056 Ohm 42 A MDmesh V
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STMicroelectronics 1687
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AUD 10.9478
Multiples of: 30

42 A650 V63 mOhmsN - Channel 3 V- 55 C+ 150 C250 WThrough HoleTO - 247 - 3TubeSi1 Channel- 25 V , 25 V98 nCEnhancement MDmesh
DMP32D9UFZ-7B


Diodes Incorporated MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A
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Diodes Incorporated 1685
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AUD 0.1658
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- 200 mA- 30 V10 OhmsP - Channel10 V- 1 V- 55 C+ 150 C390 mWSmd/SmtX2 - DFN0606 - 3ReelSi1 Channel10 V0.35 nCEnhancement Dmp32
SQ3426EV-T1_GE3


MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
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Vishay 1685
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AUD 0.8358
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7 A60 V32 mOhmsN - Channel 1.5 V- 55 C+ 175 C5 WSmd/SmtTSOP - 6Cut TapeSi1 Channel20 V12 nCEnhancementAec - Q101Trenchfet
2SK3367-Z-E1-AZ


Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) DPAK T/R
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Renesas 1685
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AUD 1.6918
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R6012JNJGTL


MOSFET NCH 600V 12A POWER
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ROHM 1685
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AUD 2.5448
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12 A600 V390 mOhmsN - Channel 5 V- 55 C+ 150 C160 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V28 nCEnhancement Prestomos
WSD30L68DN


30V 68A 69W 5.8mΩ@10V,20A 2.5V@250uA P Channel DFN-8(3x3) MOSFETs ROHS
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Winsok 1685
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AUD 0.5158
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IPN60R1K5CEATMA1


600V 5A 5W 1.5O@1.1A,10V N Channel SOT-223 MOSFETs ROHS
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Infineon 1684
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AUD 0.2545
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5 A600 V3.51 OhmsN - Channel 2.5 V- 40 C+ 150 C5 WSmd/SmtSOT - 223 - 3ReelSi1 Channel+/- 20 V9.4 nCEnhancement Coolmos
BLM10P03-E


SOP-8 MOSFETs ROHS
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Belling 1682
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AUD 0.2202
Multiples of: 5

                   
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