MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PSMN7R0-30MLC,115


NXP Semiconductors MOSFET N-channel MOSFET logic level LFPAK33
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Nexperia 1764
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AUD 0.2972
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67 A30 V9 mOhmsN - Channel2.15 V   57 WSmd/SmtLFPAK - 4ReelSi1 Channel2.15 V    
AUIRF2804STRL


Transistor: N-MOSFET; unipolar; 40V; 270A; 300W; D2PAK
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Infineon 1764
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AUD 3.3955
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            Hexfet®      
IRF7805ZTRPBF


MOSFET N Trench 30V 16A 2.25V @ 250uA 6.8 mΩ @ 16A,10V SOIC-8_150mil RoHS
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Infineon 1763
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AUD 0.753
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16 A30 V8.7 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V18 nC   
NDS8435A(UMW)


SOP-8 MOSFETs ROHS
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Youtai 1760
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AUD 0.1292
Multiples of: 5

                   
ZXMS6008FFQ-7


MOSFETs Low Side IntelliFET SOT23F T&R 3K
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Diodes Incorporated 1760
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AUD 0.3536
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1.1 A60 V700 mOhmsN - Channel 700 mV- 40 C+ 125 C1.5 WSMD/SMTSOT23F - 3Reel , Cut Tape 1 Channel  Enhancement  
BSH203,215


P-Channel 30 V 470mA (Ta) 417mW (Ta) Surface Mount TO-236AB
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Nexperia 1760
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AUD 0.376
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470 mA30 V900 mOhmsP - Channel 400 mV- 55 C+ 150 C417 mWSmd/SmtSOT - 23ReelSi1 Channel- 4.5 V2.2 nCEnhancement  
IPP016N06NF2SAKMA1


MOSFETs IFX FET 60V
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Infineon 1760
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AUD 1.3413
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194 A60 V1.6 mOhmsN - Channel 2.1 V- 55 C+ 175 C250 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , 20 V155 nCEnhancement  
SI7615DN-T1-GE3


MOSFET RECOMMENDED ALT 78-SI7615ADN-T1-GE3
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Vishay 1759
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AUD 1.1609
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35 A20 V3.1 mOhmsP - Channel 1.5 V- 55 C+ 150 C52 WSmd/SmtPOWERPAK - 1212 - 8-Si1 Channel12 V183 nCEnhancement Trenchfet
TPH2R306NH,L1Q


N-Channel 60 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)
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Toshiba 1682
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AUD 1.0667
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130 A60 V1.9 mOhmsN - Channel 2 v to 4 V- 55 C+ 150 C78 WSmd/SmtSOP - 8ReelSi1 Channel20 V72 nC  Umosviii
BUK9640-100A,118


MOSFET TAPE13 PWR-MOS
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Nexperia 1555
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AUD 1.1985
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39 A100 V39 mOhmsN - Channel 1 V- 55 C+ 175 C158 WSmd/SmtSOT - 404ReelSi1 Channel10 V48 nCEnhancement  
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