IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHFW40N65R5S


IGBT Transistors HOME APPLIANCES 14
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Infineon 0
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AUD 11.7433

Multiples of: 1

                
APT30GP60BG


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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Microchip 0
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AUD 11.7508

Multiples of: 1

         TubeSi     
IXGK60N60B2D1


IGBT Transistors IGBT w/ Diode 600V 60A
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IXYS 0
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AUD 11.7557

Multiples of: 1

Single600 V1.8 V+/- 20 V    TO - 264 - 3Tube Through Hole - 55 C+ 150 CIxgk60n60
6MBP15XSF-060-50


IGBT DIL 6-PACK, 15A, 600V WITH O/I, O/T
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Fuji 0
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AUD 11.7772

Multiples of: 1

                
STGW40M120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics 0
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AUD 11.8506

Multiples of: 1

Single1200 V1.85 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole468 W- 55 C+ 175 C900 - 1300V Igbts
FID60-06D


IXYS IGBT Transistors 60 Amps 600V
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IXYS 0
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AUD 11.8579

Multiples of: 1

Single600 V1.6 V- 20 V65 A200 nA200 W ISOPLUS I4 - PAC - 5TubeSiThrough Hole200 W- 55 C150 CFid60 - 06D
IXGR35N120BD1


IGBT Transistors 23 Amps 1200V 3.7 Rds
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IXYS 0
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AUD 11.8611

Multiples of: 1

Single1200 V +/- 20 V    ISOPLUS 247 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgr35n120
IXDH30N120


IXYS IGBT Transistors 30 Amps 1200V
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IXYS 0
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AUD 11.92

Multiples of: 1

Single1.2 kV2.4 V+/- 20 V60 A500 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxdh30n120
FGH75T65UPD_F085


IGBT Transistors 650V/75A FS TRENCH IGBT
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ON Semiconductor 0
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AUD 11.9375

Multiples of: 1

Single650 V2.21 V+/- 20 V150 A400 nA375 W TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 CFgh75t65
IXGR72N60C3D1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 75A
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IXYS 0
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AUD 12

Multiples of: 1

 600 V2.1 V20 V75 A100 nA  ISOPLUS 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 CIxgr72n60
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