IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG7PH44K10D-EPBF


Trans IGBT Chip N-CH 1.2KV 70A 3-Pin(3+Tab) TO-247AD Tube
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AUD 9.0356
Multiples of: 77

      320 W         
IXYH40N65B3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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AUD 9.0478
Multiples of: 1

Single650 V1.7 V20 V86 A100 nA  TO - 247 - 3 SiThrough Hole300 W- 55 C+ 175 C 
IXYH40N65C3D1


IGBT Transistors
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AUD 9.0478
Multiples of: 1

        TO - 247AD - 3TubeSiThrough Hole    
IRG7PH42UD1-EP


International Rectifier IGBT Transistors
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AUD 9.0514
Multiples of: 1

 1.2 kV2 V 85 A   TO - 247 - 3TubeSiThrough Hole313 W   
MSG120T65HLC1


120A 650V TO-247plus IGBT Transistors / Modules ROHS
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AUD 9.0637
Multiples of: 1

                
RJH60D7BDPQ-E0#T2


IGBT Transistors IGBT
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AUD 9.0843
Multiples of: 1

         TubeSi     
IRGP4760D-EPBF


IGBT Transistors IGBT DISCRETES
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 9.1238
Multiples of: 1

Single650 V1.7 V+/- 20 V90 A+/- 100 nA  TO - 247AD - 3TubeSiThrough Hole325 W- 40 C+ 175 C 
IKW50N65H5AXKSA1


IGBT Transistors IGBT PRODUCTS
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AUD 9.1543
Multiples of: 1

Single650 V1.66 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole270 W- 40 C+ 175 CTrenchstop 5 H5
APT70GR65B2DU40


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 9.1604
Multiples of: 1

         TubeSi     
APT45GR65BSCD10


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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AUD 9.1714
Multiples of: 1

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