IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...216217218219220...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH72N60A3


IGBT Transistors 72 Amps 600V 1.35 Rds
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IXYS 50
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AUD 8.7339
Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh72n60
IXGH32N60C


IGBT Transistors 60 Amps 600V 2.5 Rds
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IXYS 0
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AUD 8.9329
Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh32n60
IRG4PH50UD


Transistor: IGBT; 1200V; 45A; 200W; TO247-3
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Infineon 0
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AUD 8.9425
Multiples of: 1

      200 W         
IXXH60N65C4


IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
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IXYS 0
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AUD 9.2368
Multiples of: 300

Single650 V1.8 V20 V118 A100 nA  TO - 247AD - 3TubeSiThrough Hole455 W- 55 C+ 175 CIxxh60n65
IXGR60N60C3D1


IGBT Transistors 60 Amps 600V
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IXYS 0
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AUD 8.9753
Multiples of: 1

Single600 V2.5 V20 V75 A100 nA  Isoplus247TubeSiThrough Hole170 W- 55 C+ 150 CIxgr60n60
AUIRGP4062D-E


IGBT Transistors 600V Auto UltraFast Copack Trench IGBT
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Infineon 0
6 to 16 Weeks Calender.png

AUD 8.9842
Multiples of: 1

      250 W         
STGW60H65F


IGBT Transistors 60A 650V FST IGBT Very High Switching
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STMicroelectronics 0
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AUD 8.9885
Multiples of: 1

  1.9 V+/- 20 V120 A100 nA360 W TO - 247Tube Through Hole - 55 C+ 150 CStgw60h65f
IRGP4063D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 48A 5uS 1.65V VCE
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Infineon 0
6 to 16 Weeks Calender.png

AUD 9.0171
Multiples of: 1

 600 V2.05 V20 V96 A100 nA  TO - 247 - 3TubeSiThrough Hole330 W   
IXXH40N65C4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
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IXYS 0
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AUD 9.0269
Multiples of: 1

Single       TO - 247 - 3Tube Through Hole455 W- 55 C+ 175 C 
IXYA20N120C3HV


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 0
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AUD 9.0269
Multiples of: 1

Single1.2 kV3.4 V20 V40 A100 nA  TO - 263HV - 2 SiSmd/Smt278 W- 55 C+ 175 C 
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First...216217218219220...

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