IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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(Ex. GST)(▲▼)
Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGH30N60B


IGBT Transistors 60 Amps 600V 1.8 Rds
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IXYS 0
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AUD 8.3943

Multiples of: 1

         -      
IXGH32N60B


IGBT Transistors 60 Amps 600V 2.3 Rds
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AUD 8.3943

Multiples of: 1

Single600 V +/- 20 V    TO - 247AD - 3Tube Through Hole - 55 C+ 150 CIxgh32n60
IRG7PH37K10D-EPBF


Transistor: IGBT; 1200V; 45A; 216W; TO247-3
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Infineon 0
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AUD 8.402

Multiples of: 82

      216 W         
IRGP6690DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon 0
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AUD 8.4153

Multiples of: 71

Single600 V1.65 V20 V140 A200 nA  TO - 247AC - 3TubeSiThrough Hole483 W- 40 C+ 175 C 
AUIRGP66524D0


Transistor: IGBT; IGBT Trench; 600V; 40A; 107W; TO247AC
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AUD 8.4686

Multiples of: 1

      107 W   Igbt Trench     
AUIRGP4062D


Transistor: IGBT; IGBT Trench; 600V; 24A; 125W; TO247AC
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Infineon 0
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AUD 8.5032

Multiples of: 1

      125 W   Igbt Trench     
IXGP12N100AU1


Trans IGBT Chip N-CH 1KV 24A 3-Pin(3+Tab) TO-220AB
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IXYS 0
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AUD 8.5576

Multiples of: 1

Single               
FGH75T65SQDTL4


IGBT Transistors 650V FS4 Trench IGBT
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ON Semiconductor 0
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AUD 8.5612

Multiples of: 1

Single650 V1.6 V+/- 20 V150 A400 nA  TO - 247 - 3Tube Through Hole375 W- 55 C+ 175 CFgh75t65sqdtl4
FII30-06D


IXYS IGBT Transistors 30 Amps 600V
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AUD 8.6301

Multiples of: 1

Dual600 V1.9 V+/- 20 V30 A200 nA  ISOPLUS I4 - PAC - 5TubeSiThrough Hole100 W- 55 C+ 150 CFii30 - 06D
IXGH20N140C3H1


IGBT Transistors GenX3 1400V IGBTs w/ Diode
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 8.6301

Multiples of: 1

Single1400 V4 V+/- 20 V42 A100 nA250 W TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 CIxgh20n140
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