IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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(Ex. GST)(▲▼)
Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGW75N65WE


520W 124A 650V TO-247 Single IGBTs RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Fuji 331
Ships to you
between Thu. 15 Oct to Tue. 20 Oct
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AUD 4.2297

Multiples of: 1

            520 W   
NGTB40N120L3WG


IGBT Transistors IGBT 1200V 40A FS3 LOW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 6.0329

Multiples of: 1

Single1.2 kV1.55 V+/- 20 V160 A200 nA  TO 247 - 3TubeSiThrough Hole454 W- 55 C+ 175 C 
STGW40NC60V


Trans IGBT Chip N-CH 600V 80A 3-Pin(3+Tab) TO-247 Tube
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 6.0377

Multiples of: 1

Single        Rail/Tube      
APT50GN60BG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 6.0413

Multiples of: 50

Single600 V1.5 V30 V107 A600 nA366 W TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
NGTB50N65FL2WG


IGBTs Trench Field Stop 650V 100A TO-247 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 6.0446

Multiples of: 30

                
IXGH120N30C3


IGBT Transistors 120 Amps 300V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 6.0657

Multiples of: 1

Single300 V1.75 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh120n30
IRGP4630D-EPBF


IGBT Transistors G6, 600V, 30A, COPAK-247AD
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 6.072

Multiples of: 1

         Tube      
IRG7PH42UPBF


Transistor: IGBT; 1200V; 90A; 385W; TO247-3
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Infineon 0
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AUD 6.0827

Multiples of: 1

Single1.2 kV2 V+/- 30 V90 A 385 W TO - 247TubeSiThrough Hole385 W- 55 C  
NGTB40N120FL2WAG


IGBT Transistors 1200V/40 FAST IGBT FSII T
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 6.0951

Multiples of: 1

Single1200 V 30 V160 A200 nA  TO - 247 - 4TubeSiThrough Hole268 W- 55 C+ 175 C 
AOK40B60D1


Transistor: IGBT; 600V; 40A; 111W; TO247; Eoff: 0.3mJ; Eon: 1.55mJ
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Alpha & Omega 0
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AUD 6.1111

Multiples of: 1

  1.85 V   111 W         
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