IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...206207208209210...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH50N65C3


IGBT Transistors 650V/130A XPT C3-Class TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 7.7324
Multiples of: 1

Single650 V1.74 V30 V130 A100 nA  TO - 247AD - 3TubeSiThrough Hole600 W- 55 C+ 175 CIxyh50n65
RGW50TS65GC11


ROHM Semiconductor
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AUD 7.5122
Multiples of: 1

                
IXGK28N140B3H1


IXYS IGBT Transistors 28 Amps 1400V
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IXYS 0
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AUD 7.5123
Multiples of: 1

Single1.4 kV3 V+/- 20 V60 A100 nA  TO - 264 - 3TubeSiThrough Hole300 W- 55 C+ 150 CIxgk28n140
IGW75N60H3FKSA1


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 7.525
Multiples of: 1

                
FGB20N60SFD-F085


IGBT Transistors 600V 20A FSP IGBT
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ON Semiconductor 0
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AUD 7.5387
Multiples of: 1

                
IXA4IF1200TC


IGBT Transistors XPT IGBT Copack
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IXYS 0
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AUD 7.54
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Single1200 V1.8 V20 V9 A500 nA  TO - 268 - AA - 4TubeSiSmd/Smt45 W- 55 C+ 150 CIxa4if1200
RGTV80TS65DGC11


ROHM Semiconductor
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ROHM 0
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AUD 7.5561
Multiples of: 1

                
BXE40T1K2HFSD


Transistor: IGBT; 1.2kV; 40A; 278W; TO247-3
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Bridgelux 0
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AUD 7.56
Multiples of: 1

      278 W         
APT45GR65B2DU30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip 0
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AUD 7.5723
Multiples of: 1

         TubeSi     
IHW30N100TFKSA1


Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-247
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AUD 7.5794
Multiples of: 1

                
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