JFETs

JFET stands for Junction Field Effect Transistor. It is a type of transistor used in electronic circuits to control current and voltage. It is a voltage-controlled device with three terminals, the gate, drain, and source. The gate is used to control the current flow between the drain and source, which is determined by the voltage applied to the gate. The JFET allows for precise control of current and voltage, making it ideal for applications such as amplifiers, communications, and switching. It is also used in low-power and low-noise applications.
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(Ex. GST)(▲▼)		Enter Qty Transistor PolarityDrain-Source Current at Vgs=0Vds - Drain-Source Breakdown VoltageVgs - Gate-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceConfigurationPd - Power DissipationMounting StylePackage / CasePackagingTechnologyGate-Source Cut-off VoltageMinimum Operating TemperatureMaximum Operating TemperatureSeriesQualification
  
                     
CPH5905G-TL-E


NPN Epitaxial Silicon Transistor and N-Channel Silicon Junction Field Effect Transistor 5-Pin CPH T/R
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ON Semiconductor 2090
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AUD 0.3087
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          Reel    cph5905 
2N4093


JFET . .
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Central Semiconductor 2081
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AUD 6.1731
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         TO - 18Bulk    2n4093 
2SK880-Y(TE85L,F)


JFETs N-Ch Audio Amp Fet 15mS 1.0db 10V 0.5mA
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Toshiba 2032
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AUD 0.2209
Multiples of: 5

                 
IFN201AST3TR


JFETs JFET N-Channel -40V Low Ciss
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InterFET 1988
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AUD 0.9604
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          Reel , Cut Tape    IFN201 
2N4391


Central Semiconductor JFET N-Chan JFET
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Central Semiconductor 1965
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AUD 2.4299
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n - channel50 mA to 150 mA40 V40 V0.1 nA30 Ohmssingle1.8 Wthrough holeTO - 18Bulk    2n4391 
2SK880-BL(TE85L,F)


JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA
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Toshiba 1881
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AUD 0.6343
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n - channel1.2 mA10 V- 50 V0.5 mA  100 mWsmd/smtSC - 70Reel  - 55 C+ 125 C2sk880 
SMPJ270TR


JFET JFET -30V P-Ch 1.0nA 50mA 360mW
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InterFET 1791
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AUD 1.9701
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JFE150DCKR


JFET Ultra-low noise, low gate current, audio, N-channel JFET
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Texas Instruments 1649
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AUD 2.9168
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J110


JFET JFET N-Channel -25V 50mA 360mW 3.27mW
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InterFET 1636
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AUD 4.9016
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n - channel10 mA15 V- 25 V1 uA18 Ohmssingle360 mWthrough holeTO - 92 - 3Bulksi   j110 
NSVJ3910SB3T1G


JFET NCH J-FET
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ON Semiconductor 905
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AUD 0.5098
Multiples of: 1

  25 V 50 mA single400 mWsmd/smtCPH - 3Cut Tape  - 55 C+ 150 C aec - q101
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