IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
RGW40TK65DGVC11


ROHM Semiconductor
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ROHM 0
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AUD 5.2558

Multiples of: 1

                
NGTB40N120FLWG


IGBT Transistors IGBT, 1200 V, 40 A, FS1 Solar/UPS
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ON Semiconductor 0
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AUD 5.0545

Multiples of: 100

Single1200 V2 V25 V80 A200 nA  TO - 247TubeSiThrough Hole260 W- 55 C+ 150 CNgtb40n120fl
SGT60T65FD1PN


TO-3P-3 Single IGBTs
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Silan 0
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AUD 5.06

Multiples of: 1

                
STGB30H60DLLFBAG


IGBT Transistors Automotive-grade trench gate field-stop IGBT HB series 600 V 30 A high speed
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STMicroelectronics 0
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AUD 5.063

Multiples of: 1

Single600 V1.7 V20 V30 A250 uA Aec - Q101D2PAK - 3 SiSmd/Smt260 W- 55 C+ 175 CStgb30h60dllfbag
IRG4PF50WDPBF


IGBT Transistors 900V Warp 20-100kHz
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Infineon 0
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AUD 5.0729

Multiples of: 1

Single900 V2.7 V+/- 20 V51 A100 nA200 W TO - 247TubeSiThrough Hole200 W- 55 C+ 150 C 
RGTV60TK65DGVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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ROHM 0
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AUD 5.0743

Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole76 W- 40 C+ 175 C 
IXXQ30N60B3M


IGBT Transistors Disc IGBT XPT-GenX3 TO-3P (3)
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 5.0776

Multiples of: 1

Single600 V1.66 V20 V33 A100 nA  TO - 220FP - 3 SiThrough Hole90 W- 55 C+ 175 C 
APT30GT60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 0
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AUD 5.0847

Multiples of: 1

Single       TO - 247 - 3TubeSiThrough Hole    
IRG4PH50S-EPBF


IGBT Transistors 1200V DC-1kHz w/ exetended lead
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Infineon 0
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AUD 5.0966

Multiples of: 1

Single1.2 kV1.7 V+/- 20 V57 A 200 W TO - 247ADTubeSiThrough Hole200 W- 55 C  
SG40T120UDB2


Transistor: IGBT; 1.2kV; 40A; 280W; TO247AD
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Sirectifier 0
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AUD 5.1

Multiples of: 1

      280 W         
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