IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...181182183184185...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IHW30N110R3


IGBT Transistors IGBT PRODUCTS
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Infineon 4
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AUD 7.6422
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Single1100 V1.55 V20 V60 A100 nA333 W TO - 247TubeSiThrough Hole333 W- 40 C+ 175 CIhw30n110
MR4010-7101


Shindengen IGBT Transistors Power IC
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Shindengen 0
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AUD 4.0068
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          Si     
RGS00TS65DHRC11


IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
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ROHM 0
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AUD 4.011
Multiples of: 1

Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
SGH30N60RUFDTU


Trans IGBT Chip N-CH 600V 48A 3-Pin(3+Tab) TO-3PN Rail
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ON Semiconductor 0
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AUD 4.011
Multiples of: 1

Single        Rail/Tube      
FGH40N65UFDTU-F085


IGBT Transistors N-ch / 40A 650V
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ON Semiconductor 0
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AUD 4.0263
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Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
FGB40T65SPD-F085


IGBT Transistors Trench IGBT
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ON Semiconductor 0
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AUD 4.0274
Multiples of: 1

Single650 V2.9 V+/- 20 V80 A+/- 400 nA  TO - 263 - 3Cut TapeSiSmd/Smt267 W- 55 C+ 175 CFgb40t65spd
IRG4PC50UPBF


Transistor: IGBT; 600V; 55A; 200W; TO247-3
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Infineon 0
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AUD 4.0328
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Single600 V2 V20 V55 A100 nA200 W TO - 247 - 3TubeSiThrough Hole200 W- 55 C+ 150 C 
FGH40T70SHD_F155


IGBT Transistors 650V FS Gen3 Trench IGBT
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ON Semiconductor 0
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AUD 4.0431
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Single700 V2.37 V+/- 20 V80 A+/- 400 nA  TO - 247 - 3BulkSiThrough Hole268 W- 55 C+ 175 CFgh40t70shd
IXGH36N60A3


IGBT Transistors GenX3 600V IGBTs
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IXYS 0
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AUD 4.0603
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        TO - 247AD - 3TubeSi    Ixgh36n60
IRGP6650DPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon 0
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AUD 4.0603
Multiples of: 1

Single600 V1.65 V20 V80 A100 nA  TO - 247AC - 3TubeSiThrough Hole306 W- 40 C+ 175 C 
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