IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N65UFDTU


IGBT Transistors N-ch / 40A 650V
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ON Semiconductor 1361
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AUD 3.5938
Multiples of: 1

Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
HGTG18N120BN


Transistor: IGBT; 1.2kV; 26A; 390W; TO247
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ON Semiconductor 0
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AUD 3.7121
Multiples of: 1

      390 W         
IHW40N60RF


IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon 0
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AUD 3.7154
Multiples of: 1

Single600 V1.85 V+/- 20 V80 A100 nA305 W TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIhw40n60
IXYA20N65C3


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 0
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AUD 3.7194
Multiples of: 1

Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3TubeSiSmd/Smt230 W- 55 C+ 175 C 
IXXP12N65B4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-220AB/FP
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IXYS 0
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AUD 3.7194
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Single       TO - 220 - 3Tube Through Hole160 W- 55 C+ 175 C 
RGCL80TS60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 0
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AUD 3.72
Multiples of: 1

Single600 V1.4 V30 V65 A200 nA  TO - 247 - 3BulkSiThrough Hole148 W- 40 C+ 175 C 
HGTG30N60B3


IGBT Transistors 600V N-Channel IGBT UFS Series
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ON Semiconductor 0
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AUD 3.7208
Multiples of: 1

Single600 V1.45 V+/- 20 V60 A+/- 250 nA208 W TO - 247 - 3Tube Through Hole - 55 C+ 150 CHgtg30n60
IRGP6630D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon 0
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AUD 3.7488
Multiples of: 1

Single600 V1.65 V20 V47 A100 nA  TO - 247AD - 3TubeSiThrough Hole192 W- 40 C+ 175 C 
KWBW40N120F4EG


IGBTs TO-247 RoHS
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JUNSHINE 0
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AUD 3.7579
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FGH40N60SFDTU-F085


Trans IGBT Chip N-CH 600V 80A Automotive 3-Pin(3+Tab) TO-247 Rail
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ON Semiconductor 0
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AUD 3.7646
Multiples of: 1

                
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