IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGWT20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics 0
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AUD 4.1918
Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 3PTubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
IKB20N65EH5


IGBT Transistors INDUSTRY 14
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Infineon 0
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AUD 4.2003
Multiples of: 1

                
IHW30N160R5


IGBT Transistors HOME APPLIANCES 14
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Infineon 0
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AUD 4.2005
Multiples of: 1

                
IRG4PC40FDPBF


IGBT Transistors 600V Fast 1-8kHz
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Infineon 0
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AUD 4.2041
Multiples of: 1

Single600 V1.7 V+/- 20 V49 A 160 W TO - 247Tube Through Hole - 55 C  
IHW30N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 30A
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Infineon 0
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AUD 4.2115
Multiples of: 1

Single600 V1.5 V+/- 20 V30 A   TO - 247 - 3TubeSiThrough Hole187 W- 40 C+ 150 CIhw30n60
FGA25N120ANTDTU_F109


IGBT Transistors Copak Discrete
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ON Semiconductor 0
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AUD 4.2197
Multiples of: 1

Single1200 V +/- 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga25n120antdtu
IXYH20N65C3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS 0
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AUD 4.2209
Multiples of: 1

Single650 V2.27 V20 V50 A100 nA  TO - 247AD - 3 SiThrough Hole230 W- 55 C+ 175 C 
STGWA30H65FB


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 30 A high speed
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STMicroelectronics 0
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AUD 4.2247
Multiples of: 1

Single650 V1.55 V20 V60 A250 nA  TO - 247 - 3 SiThrough Hole260 W- 55 C+ 175 CStgwa30h65fb
RJH60T04DPQ-A1#T0


IGBT Transistors IGBT 650V TO247A
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Renesas 0
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AUD 4.2351
Multiples of: 700

Single600 V1.5 V+/- 30 V60 A+/- 1 uA  TO - 247A - 3Tube Through Hole208.3 W- 55 C+ 150 C 
RGTV00TS65GC11


IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
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ROHM 0
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AUD 4.2411
Multiples of: 1

Single650 V1.5 V30 V95 A200 nA  TO - 247N - 3TubeSiThrough Hole276 W- 40 C+ 175 C 
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