IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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First...156157158159160...
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGB20NB37LZT4


STMicroelectronics IGBT Transistors N-Ch Clamped 20 Amp
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 3.6918
Multiples of: 1

Single20 V2 V12 V40 A+/- 660 uA200 WAec - Q101D2PAK - 3ReelSiSmd/Smt200 W- 55 C+ 150 CStgb20nb37lz
HGTG20N60B3D


Transistor: IGBT; 600V; 20A; 165W; TO247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 3.7039
Multiples of: 450

      165 W         
AOK20B120E1


Transistor: IGBT; 1.2kV; 20A; 167W; TO247; 0.83mJ
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Alpha & Omega 0
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AUD 3.7046
Multiples of: 1

  1.68 V   167 W         
AUIRGSL30B60K


IGBT Transistors 600V AUTO ULTRAFAST 10-30 KHZ IGBT
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Infineon 0
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AUD 3.708
Multiples of: 1

      180 W   Trenchstop     
HGTG18N120BN


Transistor: IGBT; 1.2kV; 26A; 390W; TO247
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ON Semiconductor 0
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AUD 3.7121
Multiples of: 1

      390 W         
HX40N120-TO264


TO-264 IGBT Transistors / Modules ROHS
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ZHHXDZ 0
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AUD 3.7144
Multiples of: 1

                
IHW40N60RF


IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon 0
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AUD 3.7154
Multiples of: 1

Single600 V1.85 V+/- 20 V80 A100 nA305 W TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 175 CIhw40n60
IXYA20N65C3


IGBT Transistors Disc IGBT XPT-GenX3 TO-263D2
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IXYS 0
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AUD 3.7194
Multiples of: 1

Single650 V2.27 V20 V50 A100 nA  TO - 263AA - 3TubeSiSmd/Smt230 W- 55 C+ 175 C 
IXXP12N65B4D1


Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-220AB/FP
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IXYS 0
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AUD 3.7194
Multiples of: 1

Single       TO - 220 - 3Tube Through Hole160 W- 55 C+ 175 C 
RGCL80TS60DGC11


IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
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ROHM 0
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AUD 3.72
Multiples of: 1

Single600 V1.4 V30 V65 A200 nA  TO - 247 - 3BulkSiThrough Hole148 W- 40 C+ 175 C 
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First...156157158159160...

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