IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
MSG20T120HLE0


TO-263 IGBT Transistors / Modules ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

MASPOWER 6
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AUD 2.4057
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IGP30N60H3


Transistor: IGBT; 600V; 30A; 187W; TO220-3; Series: H3
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Infineon 6
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AUD 4.6639
Multiples of: 1

      187 W   Trenchstop 5    H3
STGP30H60DFB


IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
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STMicroelectronics 6
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AUD 5.9655
Multiples of: 1

Single600 V1.55 V+/- 20 V60 A+/- 250 nA  TO - 220 - 3 SiThrough Hole260 W- 55 C+ 175 CStgp30h60dfb
FGHL40T120SWD


TO-247-3LD IGBTs ROHS
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ON Semiconductor 6
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AUD 7.111
Multiples of: 1

Single1.2 kV1.68 V30 V70 A   TO - 247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CFGHL40T120SWD
FGH75T65SHDT-F155


Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) TO-247 Tube
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ON Semiconductor 6
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AUD 10.7244
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Single        TubeTrench|Field Stop     
IXBT16N170A


IGBT Transistors 1700V 16A
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IXYS 6
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AUD 22.58
Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt150 W- 55 C+ 150 CIxbt16n170
IXBX75N170A


IGBT Transistors 65Amps 1700V
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IXYS 6
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AUD 54.4
Multiples of: 1

        PLUS 247 - 3TubeSiThrough Hole   Ixbx75n170
STGP5H60DF


IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
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STMicroelectronics 5
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AUD 1.6551
Multiples of: 1

Single600 V1.5 V+/- 20 V10 A+/- 250 nA  TO - 220 - 3 SiThrough Hole88 W- 55 C+ 175 CStgp5h60df
RGT00TS65DGC11


IGBT Transistors 650V 50A Trench IGBT Field Stop TO-247N
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ROHM 5
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AUD 5.6955
Multiples of: 1

Single650 V1.65 V+/- 30 V85 A200 nA  TO - 247N - 3Tube Through Hole277 W- 40 C+ 175 C 
Hot IKW75N60T


Infineon Technologies IGBT Transistors LOW LOSS DuoPack 600V 75A
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Infineon 5
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AUD 6.27
Multiples of: 1

Single600 V1.9 V+/- 20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole428 W- 40 C+ 150 CIkw75n60
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