IGBT Modules

IGBT Modules are electronic devices that utilize metal oxide semiconductor field-effect transistors (MOSFETs) as the switching element. This type of device is an efficient way to switch large currents with high frequency. IGBTs combine the properties of both bipolar transistors and field effect transistors, resulting in high power and high speed switching capabilities that make them a popular choice for applications that require high power in a small space. For example, these devices are often used in motor control and power conversion applications. Additionally, one of the main benefits of IGBT Modules is their ability to reduce electromagnetic interference while still providing excellent power efficiency.
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(Ex. GST)(▲▼)		Enter Qty ProductConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationMaximum Operating TemperatureMinimum Operating TemperaturePackagingPd - Power DissipationPackage / CaseQualification
  
                 
FS10R06VE3


Infineon Technologies IGBT Modules N-CH 600V 16A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 38
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AUD 35
Multiples of: 1

Igbt Silicon ModulesHex600 V2 V16 A400 nA + 150 C- 40 CTray50 WEASY750 
FZ600R17KE4


Infineon Technologies IGBT Modules IGBT Module 600A 1700V
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Infineon 38
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AUD 244.2657
Multiples of: 1

IGBT Silicon ModulesSingle1.7 kV1.95 V840 A400 nA + 150 C- 40 CTray3.35 kW  
SKM 400GB125D


IGBT half-bridge; Urmax:1.2kV; Ic:300A; Ifsm:600A; SEMITRANS3
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Semikron 38
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AUD 757.7134
Multiples of: 1

             
FS450R17KE3


IGBT Modules 1700V 450A 3-PHASE
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Infineon 37
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AUD 1247.7448
Multiples of: 1

Igbt Silicon ModulesHex1700 V2.45 V605 A400 nA + 125 C- 40 CTray2250 WEconopack + 
FS35R12W1T4BOMA1


TRANSISTOR, IGBT MODULE, 1.2KV, 65A
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Infineon 37
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AUD 43.386
Multiples of: 1

             
APT75GP120JDQ3


IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip 37
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AUD 75.7463
Multiples of: 1

Igbt Silicon Modules 1.2 kV3.3 V128 A100 nA + 150 C- 55 CTube543 WSOT - 227 - 4 
APTGT50A120T1G


IGBT Modules Power Module - IGBT
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Microchip 37
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AUD 101.7524
Multiples of: 1

IGBT Silicon ModulesHalf Bridge1.2 kV1.7 V75 A400 nA + 100 C- 40 CTube277 WSP1 - 12 
FS150R12N2T7B54BPSA1


IGBT Modules LOW POWER ECONO
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 37
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AUD 128.2239
Multiples of: 1

IGBT Silicon Modules6 - Pack1.2 kV1.55 V150 A100 nA + 175 C- 40 CTray-  
SKM100GB12T4


IGBT half-bridge; Urmax:1.2kV; Ic:100A; Ifsm:300A; SEMITRANS2
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Semikron 36
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AUD 157.5731
Multiples of: 1

             
FF400R12KT3


Infineon Technologies IGBT Modules N-CH 1.2KV 580A
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Infineon 28
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AUD 354.5776
Multiples of: 1

Igbt Silicon ModulesDual1200 V2.15 V580 A400 nA + 125 C- 40 CTray2000 W62 mm 
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