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Semiconductors
Discrete Semiconductors
Transistors
GaN FETs
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About GaN FETs
GaN FETs
GaN FETs
Products
27
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Manufacturer
Gan Systems
HXY MOS
Infineon
NXP
Tokmas
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Mounting Style
SMD/SMT
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Transistor Polarity
N - Channel
Reset
Number of Channels
1 Channel
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Vds - Drain-Source Breakdown Voltage
650 V
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Id - Continuous Drain Current
7.2 A
9.2 A
13 A
15 A
38 A
61 A
67 A
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Rds On - Drain-Source Resistance
30 mOhms
42 mOhms
54 mOhms
66 mOhms
140 mOhms
170 mOhms
240 mOhms
330 mOhms
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Vgs - Gate-Source Voltage
- 10 V
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Vgs th - Gate-Source Threshold Voltage
1.6 V
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Qg - Gate Charge
1.4 nC
1.8 nC
2.6 nC
3.4 nC
6.6 nC
8.4 nC
11 nC
16 nC
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Minimum Operating Temperature
- 40 C
- 55 C
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Maximum Operating Temperature
+ 150 C
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Pd - Power Dissipation
28 W
33 W
46 W
83 W
104 W
125 W
132 W
181 W
219 W
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Channel Mode
Enhancement
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Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Hot
A5G08H800W19NR3
Warehouse Options
GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
NXP
29
Ships to you
between Tue. 18 Nov to Thu. 20 Nov
November 2025
November 2025
S
M
T
W
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F
S
44
26
27
28
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31
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45
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46
9
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11
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13
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47
16
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19
20
21
22
48
23
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25
26
27
28
29
49
30
1
2
3
4
5
6
AUD 258.362
Multiples of:
1
Hot
CID9N65D5
Warehouse Options
DFN-8(5x6) GaN Transistors(GaN HEMT) ROHS
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Tokmas
0
6 to 16 Weeks
April 2026
April 2026
S
M
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W
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F
S
14
29
30
31
1
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3
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15
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19
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7
8
9
AUD 0.9427
Multiples of:
1
Hot
CID9N65E3
Warehouse Options
TO-252-3L GaN Transistors(GaN HEMT) ROHS
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Tokmas
0
6 to 16 Weeks
April 2026
April 2026
S
M
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F
S
14
29
30
31
1
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15
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19
3
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7
8
9
AUD 1.3584
Multiples of:
1
Hot
CID18N65D
Warehouse Options
DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Tokmas
0
6 to 16 Weeks
April 2026
April 2026
S
M
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W
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F
S
14
29
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31
1
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15
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9
AUD 1.6364
Multiples of:
1
Hot
CID18N65D5
Warehouse Options
DFN-8(5x6) GaN Transistors(GaN HEMT) ROHS
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Tokmas
0
6 to 16 Weeks
April 2026
April 2026
S
M
T
W
T
F
S
14
29
30
31
1
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15
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9
AUD 3.2415
Multiples of:
1
Hot
HIGLD60R190D1
Warehouse Options
DFN-8(8x8) GaN Transistors(GaN HEMT) ROHS
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
HXY MOS
0
6 to 16 Weeks
April 2026
April 2026
S
M
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W
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F
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14
29
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31
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9
AUD 6.4826
Multiples of:
1
Hot
IGLT65R025D2AUMA1
Warehouse Options
GaN FETs
Large
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.
Infineon
0
6 to 16 Weeks
April 2026
April 2026
S
M
T
W
T
F
S
14
29
30
31
1
2
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15
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AUD 11.3143
Multiples of:
1
SMD/SMT
N - Channel
1 Channel
650 V
67 A
30 mOhms
- 10 V
1.6 V
16 nC
- 55 C
+ 150 C
219 W
Enhancement
NoFilter
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DoesNotContain
StartsWith
EndsWith
EqualTo
NotEqualTo
GreaterThan
LessThan
GreaterThanOrEqualTo
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Custom
1
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3
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