8/14/2026 7:42:46 AM   By  Symond  in


Introduction

The MOSFETs IRF4905STRLPBF by Infineon are P-channel power MOSFETs designed for high-current switching and power management applications. The device is specified with a 55 V drain-to-source voltage rating and low on-state resistance, making it suitable for designs where efficient power switching is important. It is supplied in a surface-mount D2PAK package. 

As part of Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs, the IRF4905STRLPBF MOSFETs can be considered for power supplies, motor control, power conversion, and other high-current electronic switching applications.


Technical Specifications of IRF4905STRLPBF MOSFETs

General Specifications

  • Manufacturer: Infineon

  • Part Number: IRF4905STRLPBF

  • Product Type: P-Channel Power MOSFET

  • Technology: MOSFET

  • Drain-to-Source Voltage: 55 V

  • Continuous Drain Current: Up to 42 A at specified case conditions

  • Drain-Source On-Resistance: 20 mO maximum at 42 A, 10 V

  • Gate Threshold Voltage: 4 V maximum

  • Gate Charge: 180 nC at 10 V

  • Gate-to-Source Voltage: ±20 V maximum

  • Power Dissipation: 170 W at specified case conditions

  • Mounting Type: Surface Mount

  • Package: D2PAK / TO-263

  • Operating Junction Temperature: -55°C to +150°C

  • Series: HEXFET

  • Product Category: Semiconductors

  • Subcategory: Discrete Semiconductors

  • Product Family: Transistors

  • Component Type: MOSFETs

The IRF4905STRLPBF MOSFETs combine a P-channel configuration, low on-resistance, and high-current capability in a compact surface-mount package. These characteristics make them useful for Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs applications. 


Key Features of IRF4905STRLPBF MOSFETs

Design and Performance Benefits

  • P-channel power MOSFET configuration.

  • 55 V drain-to-source voltage rating.

  • Low 20 mO maximum on-resistance under specified test conditions.

  • High continuous drain-current capability.

  • 180 nC maximum gate charge at 10 V.

  • D2PAK surface-mount package.

  • Suitable for high-current switching applications.

  • Designed for efficient power switching.

  • HEXFET technology.

  • Suitable for demanding Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs applications.

The low on-resistance of the IRF4905STRLPBF MOSFETs can help reduce conduction losses in suitable switching designs, while the D2PAK package provides a practical surface-mount option for power electronics.


Applications of IRF4905STRLPBF MOSFETs

Common Use Cases

  • Power supply circuits

  • DC power switching

  • Motor control

  • Power conversion

  • Battery-powered equipment

  • High-current switching circuits

  • Industrial control systems

  • Automotive electronics

  • Power management systems

  • Electronic switching applications

The IRF4905STRLPBF MOSFETs can be used in applications where P-channel switching and high-current handling are required. Their specifications make them relevant to Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs applications.


How the IRF4905STRLPBF MOSFET Works

Switching Principle

A P-channel MOSFET controls current flow between its source and drain terminals through the voltage applied between the gate and source. When the gate-to-source voltage reaches the appropriate negative level, the MOSFET can turn on and provide a low-resistance path between the source and drain.

The low 20 mO maximum on-resistance specified for the IRF4905STRLPBF MOSFETs helps support efficient current conduction when operated under the specified conditions.


Installation and PCB Design Overview

Installation Guidelines

  • Verify the D2PAK PCB footprint before assembly.

  • Confirm the drain-to-source voltage requirement of the application.

  • Check the expected continuous and peak drain current.

  • Ensure the gate-drive voltage is within the specified limits.

  • Consider PCB copper area and thermal management for high-current operation.

  • Follow the manufacturer's recommended soldering profile.

  • Verify the MOSFET pin configuration before PCB assembly.

  • Evaluate switching losses and conduction losses during design validation.

Appropriate thermal and electrical design is important when using the IRF4905STRLPBF MOSFETs in high-current applications.


Use Case Example: High-Current Power Switching

Practical Implementation

Application: High-current DC power switching circuit.

Challenge: The design requires a P-channel MOSFET capable of handling substantial current while maintaining low conduction losses.

Solution: Engineers can use the IRF4905STRLPBF MOSFETs by Infineon as the high-side or power-switching element where the device's voltage, current, gate-drive, and thermal specifications are appropriate.

Result: The low on-resistance and high-current capability provide a practical solution for suitable power-switching designs.

This example demonstrates how the IRF4905STRLPBF MOSFETs can support electronic systems using Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs.


Datasheet Information

The IRF4905 family documentation specifies a 55 V P-channel MOSFET, low on-resistance, high current capability, HEXFET technology, and D2PAK surface-mount packaging. The published electrical specifications should be reviewed carefully for the exact operating conditions, thermal limits, switching characteristics, safe operating area, and electrical ratings required by your application. 

For complete electrical characteristics, maximum ratings, thermal specifications, switching parameters, mechanical dimensions, PCB recommendations, and application information, refer to the applicable product documentation before final component selection.


Why Buy IRF4905STRLPBF MOSFETs from X-On Electronics?

Purchasing IRF4905STRLPBF MOSFETs by Infineon from X-On Electronics provides several advantages:

  • Genuine Infineon products

  • Competitive pricing

  • Bulk purchasing options

  • Global sourcing support

  • Worldwide shipping

  • Professional customer support

  • Reliable sourcing for power semiconductor applications

Choose X-On Electronics for genuine Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs products backed by dependable global service.


FAQs – IRF4905STRLPBF MOSFETs

What is the IRF4905STRLPBF used for?

The IRF4905STRLPBF MOSFETs are designed for high-current switching and power management applications, including power supplies, motor control, and power conversion.

Who manufactures the IRF4905STRLPBF?

The IRF4905STRLPBF is manufactured by Infineon.

Is the IRF4905STRLPBF a P-channel or N-channel MOSFET?

The IRF4905STRLPBF is a P-channel MOSFET.

What is the drain-to-source voltage rating?

The IRF4905STRLPBF MOSFETs have a 55 V drain-to-source voltage rating. (DigiKey)

What package does the IRF4905STRLPBF use?

The device uses a surface-mount D2PAK / TO-263 package. (DigiKey)

Where can I buy genuine IRF4905STRLPBF MOSFETs?

You can purchase genuine IRF4905STRLPBF MOSFETs from X-On Electronics with worldwide shipping and customer support.


Conclusion

The IRF4905STRLPBF MOSFETs by Infineon provide a P-channel power switching solution combining a 55 V voltage rating, low on-resistance, high current capability, and a compact D2PAK surface-mount package. These characteristics make the device suitable for a range of power switching and power management applications.

As an important component within Semiconductors, Discrete Semiconductors, Transistors, and MOSFETs, the IRF4905STRLPBF MOSFETs can be considered for power supplies, motor control, power conversion, industrial equipment, and other high-current electronic designs. Purchase genuine Infineon products from X-On Electronics for competitive pricing, reliable sourcing, and worldwide delivery.


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