MMBT5551 Bipolar Transistors - BJT by ON Semiconductor – High-Voltage Switching for Precision Electronics

The Bipolar Transistors - BJT MMBT5551 by ON Semiconductor offer high-voltage handling, stable gain characteristics, and reliable switching performance. As a key component within the Semiconductors, Discrete Semiconductors, Transistors, Bipolar Transistors - BJT family, the MMBT5551 is widely used in signal amplification, high-voltage switching, and general-purpose electronic designs.

Now available globally at www.xonelec.com.

Technical Specifications of MMBT5551

• Manufacturer: ON Semiconductor

• Part Number: MMBT5551

• Category: Semiconductors, Discrete Semiconductors, Transistors, Bipolar Transistors - BJT

• Type: NPN Transistor

• Collector-Emitter Voltage (VCEO): 160V

• Collector Current (IC): 600mA

• Power Dissipation: ~300mW

• DC Current Gain (hFE): 20–300 (depending on test conditions)

• Package: SOT-23

• Designed for high-voltage small-signal applications

Key Features of MMBT5551

• High VCEO rating ideal for high-voltage circuits

• Suitable for signal amplification and switching

• SOT-23 package for compact PCB layouts

• Reliable performance in Transistors applications

• Consistent gain across operating conditions

• High efficiency for Bipolar Transistors - BJT based designs

Applications of MMBT5551 Bipolar Transistors

• High-voltage signal switching

• Audio and low-frequency amplification

• LED driver circuits

• Voltage regulation modules

• Industrial control and automation boards

• Consumer electronics

Wiring and Connection Overview

• Standard NPN transistor configuration

• Base, collector, and emitter clearly labeled on SOT-23 footprint

• Suitable for automated SMD processes

• Reliable for modern Semiconductors, Discrete Semiconductors, Transistors circuits

• Ideal for compact and high-voltage Bipolar Transistors - BJT assemblies

Use Case Scenario – High-Voltage Signal Driver Design

Problem: Engineers need a compact transistor that supports high-voltage switching without compromising stability.
Solution: The MMBT5551 Bipolar Transistors - BJT by ON Semiconductor deliver stable gain and high VCEO for demanding designs.
Result: Improved system reliability, cleaner switching performance, and higher resilience across bold Semiconductors, Discrete Semiconductors, Transistors, Bipolar Transistors - BJT applications.

Download Datasheet for MMBT5551

The complete electrical characteristics and switching graphs are available in the MMBT5551 datasheet on XON Electronics.

Also Available from Other Manufacturers

You can also find similar Bipolar Transistors - BJT from:

• High Diode

• Jinkaisheng

• IDCHIP

• LGE

• KEXIN

• Jinyu

• Yangjie

• Diotec

• NTE and more…

These alternatives provide flexibility across bold Semiconductors, Discrete Semiconductors, Transistors, Bipolar Transistors - BJT categories.

Why Buy MMBT5551 from XON Electronics?

• Reliable selection of Transistors and Bipolar Transistors - BJT

• Ships worldwide including USA, India, Australia, Europe & more

• Guaranteed original ON Semiconductor components

• Bulk discounts and competitive pricing

• Trusted sourcing through x-on electronics

FAQs – MMBT5551 Transistor

Q1: What type of transistor is MMBT5551?
NPN transistor.

Q2: What is its maximum voltage rating?
160V VCEO.

Q3: What package does it use?
SOT-23.

Q4: Is it suitable for amplification?
Yes, widely used for small-signal amplification.

Q5: Can MMBT5551 handle high current?
It supports up to 600mA collector current.

Conclusion

The MMBT5551 Bipolar Transistors - BJT by ON Semiconductor offer solid electrical performance, high-voltage capability, and reliable switching behavior. As a leading component in the bold Semiconductors, Discrete Semiconductors, Transistors, Bipolar Transistors - BJT segment, it remains a preferred choice for numerous industrial, consumer, and precision electronics applications.
Order today from xon electronics.